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100V|2.3A|2.3W
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MOSFET 2N-CH 100V 2.3A 8PQFN
Specifications
- Brand
- Infineon Technologies
- Package
- 8-PowerVDFN
- Packaging
- —
- Weight
- —
Total Inventory
300pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRFHM792TRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 2.3A | |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.9A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 10µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V | |
| Power - Max | 2.3W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
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