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100V|3.2A (Ta), 20A (Tc)|2.8W (Ta), 29W (Tc)
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MOSFET N-CH 100V 10A PQFN
Specifications
- Brand
- Infineon Technologies
- Package
- 8-PQFN (3x3)
- Packaging
- —
- Weight
- —
Total Inventory
309pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRFHM3911TRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta), 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 6.3A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 35µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.8W (Ta), 29W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-PQFN (3x3) | |
| Package / Case | 8-PowerTDFN |
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