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200V|3.8A (Ta), 20A (Tc)|3.6W (Ta), 8.3W (Tc)
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MOSFET N-CH 200V 3.8A PQFN
Specifications
- Brand
- Infineon Technologies
- Package
- PQFN (5x6)
- Packaging
- —
- Weight
- —
Total Inventory
265pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRFH5220TR2PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 99.9mOhm @ 5.8A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PQFN (5x6) | |
| Package / Case | 8-VQFN Exposed Pad |
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