Heisener Electronics
BOM

IRFBF20S

900V|1.7A (Tc)|3.1W (Ta), 54W (Tc)
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MOSFET N-CH 900V 1.7A D2PAK

Specifications

Brand
Vishay Siliconix
Package
D2PAK
Packaging
—
Weight
—

Total Inventory

338pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFBF20S from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds490pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

irfbf20strr.pdf

PDF Document · 11 pages

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