Heisener Electronics
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IRFBE20

800V|1.8A (Tc)|54W (Tc)
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MOSFET N-CH 800V 1.8A TO-220AB

Specifications

Brand
Vishay Siliconix
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

448pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFBE20 from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

irfbe20strr.pdf

PDF Document · 9 pages

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Datasheet Preview

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