Heisener Electronics
BOM

IRFB4137PBF

300V|38A (Tc)|341W (Tc)
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MOSFET N-CH 300V 38A TO-220PAK

Specifications

Brand
Infineon Technologies
Package
TO-220
Packaging
—
Weight
—

Total Inventory

794pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFB4137PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs69mOhm @ 24A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs125nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5168pF @ 50V
FET Feature-
Power Dissipation (Max)341W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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