Contact
Send MessageIRFB3207ZPBF
75V|120A (Tc)|300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 75V 120A TO-220AB
Specifications
- Brand
- Infineon Technologies
- Package
- TO-220AB
- Packaging
- —
- Weight
- —
Total Inventory
3,092pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRFB3207ZPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 75V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 150µA | |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 6920pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
Recommended Products
RES SMD 110 OHM 2% 1.5W 0603
RES SMD 487 OHM 0.25% 1/4W 1206
RES SMD 22.6K OHM 1% 1/2W 1206
RES SMD 825 OHM 1% 1/16W 0402
CRGCQ 1206 22K 1%
CAP CER 10PF 2.5KV C0G/NP0 1808
CAP CER 270PF 500V C0G/NP0 1812
CAP ALUM 470UF 20% 10V RADIAL
8PW DIP H GAIN OPTOCOUPLER (VDE)
CONN 22POS 0.8MM SMT
