Contact
Send MessageIRFB3206PBF
60V|120A (Tc)|300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 60V 120A TO-220AB
Specifications
- Brand
- Infineon Technologies
- Package
- TO-220AB
- Packaging
- —
- Weight
- —
Total Inventory
6,386pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRFB3206PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 150µA | |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 6540pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
Recommended Products
RES SMD 21.875K OHM 0.3W 1206
MEMS OSC PROG VCXO LVCMOS 3.3V
CAP CER 1000PF 200V C0G/NP0 2220
CAP CER 30PF 200V NP0 0805
SENSOR SEALED GAUGE 0-200 PSI
TVS DIODE 20V 32.4V DO214AB
CONN PLUG HSG FMALE 39POS INLINE
CONN RCPT HSNG MALE 14POS PNL MT
CONN EDGE DUAL FMALE 12POS 0.100
DIODE SCHOTTKY 16V 150MA DO213AA
