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200V|31A (Tc)|3.1W (Ta), 200W (Tc)
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MOSFET N-CH 200V 31A TO-220AB
Specifications
- Brand
- Infineon Technologies
- Package
- TO-220AB
- Packaging
- —
- Weight
- —
Total Inventory
3,068pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRFB31N20DPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 18A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2370pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.1W (Ta), 200W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
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