IRF8910GPBF
20V|10A|2W
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET 2N-CH 20V 10A 8-SO
规格参数
- 品牌
- Infineon Technologies
- 封装
- 8-SOIC (0.154", 3.90mm Width)
- 包装方式
- —
库存总量
388个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Infineon Technologies 的 IRF8910GPBF 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 10A | |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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