Heisener Electronics
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IRF7702GTRPBF

12V|8A (Ta)|1.5W (Ta)
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MOSFET P-CH 12V 8A 8-TSSOP

Specifications

Brand
Infineon Technologies
Package
8-TSSOP
Packaging
—
Weight
—

Total Inventory

204pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF7702GTRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs14mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3470pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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Datasheet & Documents

irf7702gtrpbf.pdf

PDF Document · 8 pages

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