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55V|4.7A (Tc)|2W (Tc)
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MOSFET 2N-CH 55V 4.7A 8DSO-902
Specifications
- Brand
- Infineon Technologies
- Package
- 8-SOIC (0.154", 3.90mm Width)
- Packaging
- —
- Weight
- —
Total Inventory
16,641pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF7341TRPBFXTMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V | |
| Power - Max | 2W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | PG-DSO-8-902 |
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