Heisener Electronics
BOM

IRF6794MTRPBF

25V|32A (Ta), 200A (Tc)|2.8W (Ta), 100W (Tc)
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MOSFET N-CH 25V DIRECTFET MX

Specifications

Brand
Infineon Technologies
Package
DIRECTFET™ MX
Packaging
—
Weight
—

Total Inventory

173pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF6794MTRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C32A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4420pF @ 13V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)2.8W (Ta), 100W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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Datasheet & Documents

irf6794mtrpbf.pdf

PDF Document · 9 pages

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