Heisener Electronics
BOM

IRF6718L2TRPBF

25V|61A (Ta), 270A (Tc)|4.3W (Ta), 83W (Tc)
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MOSFET N-CH 25V 61A DIRECTFET L6

Specifications

Brand
Infineon Technologies
Package
DIRECTFET L6
Packaging
—
Weight
—

Total Inventory

472pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF6718L2TRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C61A (Ta), 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.7mOhm @ 61A, 10V
Vgs(th) (Max) @ Id2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6500pF @ 13V
FET Feature-
Power Dissipation (Max)4.3W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET L6
Package / CaseDirectFET™ Isometric L6

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