Heisener Electronics
BOM

IRF6717MTRPBF

25V|38A (Ta), 200A (Tc)|2.8W (Ta), 96W (Tc)
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MOSFET N-CH 25V 38A DIRECTFET

Specifications

Brand
Infineon Technologies
Package
DIRECTFET™ MX
Packaging
—
Weight
—

Total Inventory

30,370pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF6717MTRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.25mOhm @ 38A, 10V
Vgs(th) (Max) @ Id2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs69nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6750pF @ 13V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 96W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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