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25V|12A (Ta), 39A (Tc)|1.8W (Ta), 21W (Tc)
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MOSFET N-CH 25V 12A DIRECTFET-S1
Specifications
- Brand
- Infineon Technologies
- Package
- DIRECTFET S1
- Packaging
- —
- Weight
- —
Total Inventory
109pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF6709S2TRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 25V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 39A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 13V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta), 21W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DIRECTFET S1 | |
| Package / Case | DirectFET™ Isometric S1 |
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Datasheet & Documents
irf6709s2trpbf.pdf
PDF Document · 10 pages
