Heisener Electronics
BOM

IRF6706S2TRPBF

25V|17A (Ta), 63A (Tc)|1.8W (Ta), 26W (Tc)
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MOSFET N-CH 25V DIRECTFET S1

Specifications

Brand
Infineon Technologies
Package
DIRECTFET S1
Packaging
—
Weight
—

Total Inventory

402pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF6706S2TRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1810pF @ 13V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 26W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET S1
Package / CaseDirectFET™ Isometric S1

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Datasheet & Documents

irf6706s2trpbf.pdf

PDF Document · 10 pages

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