Heisener Electronics
BOM

IRF6678

30V|30A (Ta), 150A (Tc)|2.8W (Ta), 89W (Tc)
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MOSFET N-CH 30V 30A DIRECTFET

Specifications

Brand
Infineon Technologies
Package
DIRECTFET™ MX
Packaging
—
Weight
—

Total Inventory

139pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF6678 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5640pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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Datasheet & Documents

irf6678tr1.pdf

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