IRF6665TR1PBF

100V|4.2A (Ta), 19A (Tc)|2.2W (Ta), 42W (Tc)

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MOSFET N-CH 100V 4.2A DIRECTFET

455个

12小时发货

购买数量

起订量：1 个

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了解 Infineon Technologies 的 IRF6665TR1PBF 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

Manufacturer	Infineon Technologies
Series	HEXFET®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.2W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ SH
Package / Case	DirectFET™ Isometric SH