Heisener Electronics
BOM

IRF6644TR1

100V|10.3A (Ta), 60A (Tc)|2.8W (Ta), 89W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 100V DIRECTFET-MN

Specifications

Brand
Infineon Technologies
Package
DIRECTFET™ MN
Packaging
—
Weight
—

Total Inventory

288pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF6644TR1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10.3A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id4.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2210pF @ 25V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MN
Package / CaseDirectFET™ Isometric MN

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Datasheet & Documents

irf6644tr1.pdf

PDF Document · 10 pages

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