Heisener Electronics
BOM

IRF6601

20V|26A (Ta), 85A (Tc)|3.6W (Ta), 42W (Tc)
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MOSFET N-CH 20V 26A DIRECTFET

Specifications

Brand
Infineon Technologies
Package
DIRECTFET™ MT
Packaging
—
Weight
—

Total Inventory

404pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF6601 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C26A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 26A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3440pF @ 15V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 42W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MT
Package / CaseDirectFET™ Isometric MT

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Datasheet & Documents

irf6601.pdf

PDF Document · 13 pages

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