Contact
Send MessageIRF640NLPBF
200V|18A (Tc)|150W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 200V 18A TO-262
Specifications
- Brand
- Infineon Technologies
- Package
- TO-262
- Packaging
- —
- Weight
- —
Total Inventory
3,836pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF640NLPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-262 | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Recommended Products
RES SMD 62K OHM 1% 1/16W 0402
MEMS OSC XO 133.33333MHZ LVCMOS
CAP CER 6800PF 100V C0G/NP0 RAD
CPS22-LA00A10-SNCCWTNF-AI0RMVAR-W1073-S
SWITCH PUSHBUTTON SPST 100MA 42V
DGTL ISO 2.5KV GEN PURP 16SSOP
IC DRAM 128M PARALLEL 90TFBGA
IC LED DVR DIM 5.7W 1-ST 16SOIC
.050 X .050 MICRO STRIPS
CONN PLUG HSG FMALE 11POS INLINE
MOSFET N-CH 800V 15A D2PAK
