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IRF60SC241ARMA1

60 V|360A (Tc)|2.4W (Ta), 417W (Tc)
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MOSFET N-CH 60V 360A TO263-7

规格参数

品牌
Infineon Technologies
封装
PG-TO263-7
包装方式
—

库存总量

6,351个

12小时发货

起订量:1 个

认证与授权

产品视频

了解 Infineon Technologies 的 IRF60SC241ARMA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

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技术规格

ManufacturerInfineon Technologies
SeriesStrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C360A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs388 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16000 pF @ 30 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 417W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)

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