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20V|2.7A|960mW
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MOSFET 2N-CH 20V 2.7A 6-TSOP
Specifications
- Brand
- Infineon Technologies
- Package
- SOT-23-6 Thin, TSOT-23-6
- Packaging
- —
- Weight
- —
Total Inventory
426pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF5852TR from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.7A | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V | |
| Power - Max | 960mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP |
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Datasheet & Documents
irf5852tr.pdf
PDF Document · 9 pages
