Heisener Electronics
BOM

IRF5851TR

20V|2.7A, 2.2A|960mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 20V 6-TSOP

Specifications

Brand
Infineon Technologies
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
—
Weight
—

Total Inventory

268pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF5851TR from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.7A, 2.2A
Rds On (Max) @ Id, Vgs90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V
Power - Max960mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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Datasheet & Documents

irf5851tr.pdf

PDF Document · 14 pages

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