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40V|3.4A (Ta)|2W (Ta)
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MOSFET P-CH 40V 3.4A 8-SOIC
Specifications
- Brand
- Infineon Technologies
- Package
- 8-SO
- Packaging
- —
- Weight
- —
Total Inventory
308pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF5803D2TR from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | FETKY™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 25V | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 2W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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Datasheet & Documents
irf5803d2tr.pdf
PDF Document · 11 pages
