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150V|900mA (Ta)|2W (Ta)
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MOSFET N-CH 150V 0.9A 6-TSOP
Specifications
- Brand
- Infineon Technologies
- Package
- Micro6™(TSOP-6)
- Packaging
- —
- Weight
- —
Total Inventory
142pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF5802TR from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 540mA, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Micro6™(TSOP-6) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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Datasheet & Documents
irf5802tr.pdf
PDF Document · 8 pages
