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100V|23A (Tc)|100W (Tc)
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MOSFET N-CH 100V 23A TO220AB
Specifications
- Brand
- NXP
- Package
- TO-220AB
- Packaging
- —
- Weight
- —
Total Inventory
149pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF540-127 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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- Dedicated application engineering support
Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | TrenchMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1187pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 100W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
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Datasheet & Documents
irf540-127.pdf
PDF Document · 9 pages
