Heisener Electronics
BOM

IRF5305PBF

55V|31A (Tc)|110W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 55V 31A TO-220AB

Specifications

Brand
Infineon Technologies
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

4,740pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF5305PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Recommended Products

RN65E2871BRE6

RN65E2871BRE6

RES 2.87K OHM 1/2W .1% AXIAL

XLL735106-000000X

XLL735106-000000X

XTAL OSC XO 106.0000MHZ LVDS SMD

2220Y0250390KFR

2220Y0250390KFR

CAP CER 39PF 25V C0G/NP0 2220

1808Y0100333FCT

1808Y0100333FCT

CAP CER 0.033UF 10V C0G/NP0 1808

1210J2500392GCR

1210J2500392GCR

CAP CER 3900PF 250V C0G/NP0 1210

7005L25PFI

7005L25PFI

IC SRAM 64K PARALLEL 64TQFP

ATSAM4LS4BA-UUR

ATSAM4LS4BA-UUR

IC MCU 32BIT 256KB FLASH 64WLCSP

1N6123US_1

1N6123US_1

TVS DIODE

Y14427K32000B0L

Y14427K32000B0L

RES 7.32K OHM 1/2W 0.1% RADIAL

AMM28DRKN-S92

AMM28DRKN-S92

CONN EDGE DUAL FMALE 56POS 0.156