IRF520NS

100V|9.7A (Tc)|3.8W (Ta), 48W (Tc)

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MOSFET N-CH 100V 9.7A D2PAK

155pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	Infineon Technologies
Series	HEXFET®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB