IRF510L

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Discover how IRF510L from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	Vishay Siliconix
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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