Contact
Send MessageIRF3315STRRPBF
150V|21A (Tc)|3.8W (Ta), 94W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 150V 21A D2PAK
Specifications
- Brand
- Infineon Technologies
- Package
- D2PAK
- Packaging
- —
- Weight
- —
Total Inventory
449pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF3315STRRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Recommended Products
SOT-227 600W 1000 OHM
MEMS OSC XO 25.0000MHZ H/LV-CMOS
CAP FILM 0.22UF 10% 310VAC RAD
CAP CER 100PF 100V BP 0805
SWITCH ROTARY 125 DEG;C, GRND SH
DC DC CONVERTER 12V 30W
BOX CONNECTOR SOCKET STRIP
.050'' BOARD SPACERS
INSERT MALE 48POS+1GND CRIMP
8T 29C 29#16 RECP
Datasheet & Documents
irf3315strrpbf.pdf
PDF Document · 11 pages
