
Contact
Send MessageIRF3000PBF
300V|1.6A (Ta)|2.5W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 300V 1.6A 8-SOIC
Specifications
- Brand
- Infineon Technologies
- Package
- 8-SO
- Packaging
- —
- Weight
- —
Total Inventory
417pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF3000PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 300V | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 960mA, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 730pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Recommended Products

RES 1.3 OHM 1W 1% WW AXIAL

RES SMD 2.26M OHM 1% 1W 2512

IC CHIP

CAP FILM 0.039UF 5% 50VDC RADIAL

CAP CER 330PF 500V C0G/NP0 2225

CAP ALUM 1000UF 20% 10V RADIAL

IC DGTL POT 100KOHM 14TSSOP

DIODE GEN PURP 100V 1A DO220AA

DIODE ZENER 10V 1W DO41

CONN HEADER RT/A .100 20POS 30AU
Datasheet & Documents
irf3000pbf.pdf
PDF Document · 8 pages










