Heisener Electronics
BOM

IRF2805LPBF

55V|135A (Tc)|200W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 55V 135A TO-262

Specifications

Brand
Infineon Technologies
Package
TO-262
Packaging
—
Weight
—

Total Inventory

121pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF2805LPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C135A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7mOhm @ 104A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5110pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Recommended Products

MFR-25DRE52-97R6

MFR-25DRE52-97R6

RES MF 1/4W 0.5% AXIAL

MHQ1005P0N7CT000

MHQ1005P0N7CT000

FIXED IND 0.7NH 1.2A 30 MOHM SMD

DP09HN15B15F

DP09HN15B15F

DP09 HOR 15P NDET 15F M7*7MM

1092QD6-12V

1092QD6-12V

PMI RND .5"" LED 12V TAB SEMI-DOM

LTC3535EDD-TRPBF

LTC3535EDD-TRPBF

IC REG BOOST ADJ 550MA DL 12DFN

JAN1N3174

JAN1N3174

DIODE GEN PURP 1KV 300A DO205

ISL32277EIRZ-T

ISL32277EIRZ-T

IC RCVR RS485/422 QD ESD 24QFN

155353-1

155353-1

CONN SPLICE 7000-12000 CMA CRIMP

926381-01-33-EU

926381-01-33-EU

CONN HEADER 33POS .100" GOLD

PT02SE16-26S-025

PT02SE16-26S-025

PTSE 26C 26#20 SKT RECP