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20V|4.2A (Ta)|-
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MOSFET N-CH 20V 4.2A 8SOIC
Specifications
- Brand
- Infineon Technologies
- Package
- 8-SO
- Packaging
- —
- Weight
- —
Total Inventory
375pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF1902GPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 4.5V | |
| Vgs(th) (Max) @ Id | 700mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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