Contact
Send MessageIRF1104PBF
40V|100A (Tc)|170W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 40V 100A TO-220AB
Specifications
- Brand
- Infineon Technologies
- Package
- TO-220AB
- Packaging
- —
- Weight
- —
Total Inventory
3,366pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF1104PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 60A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 170W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
Recommended Products
RES 1.58 OHM 1% 1/4W 1206
RES 56.2 OHM 1% 1/4W 1206
RES SMD 5.11M OHM 1% 1/10W 0603
MEMS OSC PROG XO LVCMOS 2.5-3.3V
LED DVR CCCV ACDC 28.8-48V 840MA
IC MOSFET DRVR SYNC BUCK 10-DFN
IC TRANSCEIVER FULL 1/1 8SOIC
CIR BRKR MAG-HYDR LEVER
2MM EJECTOR HEADER
CONN HEADER .100" 26POS DL GOLD
