Heisener Electronics
BOM

IRF1104L

40V|100A (Tc)|2.4W (Ta), 170W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 40V 100A TO-262

Specifications

Brand
Infineon Technologies
Package
TO-262
Packaging
—
Weight
—

Total Inventory

371pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF1104L from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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Datasheet & Documents

irf1104strr.pdf

PDF Document · 11 pages

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Datasheet Preview

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