Contact
Send MessageIRF1010NL
55V|85A (Tc)|180W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 55V 85A TO-262
Specifications
- Brand
- Infineon Technologies
- Package
- TO-262
- Packaging
- —
- Weight
- —
Total Inventory
475pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRF1010NL from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 43A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3210pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 180W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-262 | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Recommended Products
RES SMD 309 OHM 0.1% 1/8W 0805
CAP ALUM 33UF 20% 10V RADIAL
PUSHBUTTON ILLUM 30MM
DIODE SCHOTTKY 10A 200V TO-262AA
TRANS PNP DARL 100V 10A TO218AC
FUSE GLASS 600MA 250VAC 5X20MM
CONN BASE BOTTOM ENTRY SZ12
CONN RCPT 41POS WALL MNT SKT
CONN RCPT MALE 28POS GOLD CRIMP
TEA8918AAT
Datasheet & Documents
irf1010nstrr.pdf
PDF Document · 11 pages
