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1200V|200A
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DIODE GEN PURP 1.2KV 200A DIE
Specifications
- Brand
- Infineon Technologies
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
419pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRD3CH101DB6 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1200V | |
| Current - Average Rectified (Io) | 200A | |
| Voltage - Forward (Vf) (Max) @ If | 2.7V @ 200A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 360ns | |
| Current - Reverse Leakage @ Vr | 3.6µA @ 1200V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Operating Temperature - Junction | -40°C ~ 175°C |
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Datasheet & Documents
ird3ch101db6.pdf
PDF Document · 6 pages
