Heisener Electronics
BOM

IQE004NE1LM7SCATMA1

15 V|58A (Ta), 379A (Tc)|2.1W (Ta), 89W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH <= 40V

Specifications

Brand
Infineon Technologies
Package
PG-WHSON-8
Packaging
—
Weight
—

Total Inventory

15,000pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IQE004NE1LM7SCATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)15 V
Current - Continuous Drain (Id) @ 25°C58A (Ta), 379A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V
Rds On (Max) @ Id, Vgs0.45mOhm @ 30A, 7V
Vgs(th) (Max) @ Id2V @ 432µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 7 V
Vgs (Max)±7V
Input Capacitance (Ciss) (Max) @ Vds6240 pF @ 7.5 V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-WHSON-8
Package / Case8-PowerWDFN

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