Heisener Electronics
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IPZA60R024P7XKSA1

600 V|101A (Tc)|291W (Tc)
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MOSFET N-CH 600V 101A TO247-4-3

Specifications

Brand
Infineon Technologies
Package
PG-TO247-4-3
Packaging
—
Weight
—

Total Inventory

630pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPZA60R024P7XKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C101A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 42A, 10V
Vgs(th) (Max) @ Id4V @ 2.03mA
Gate Charge (Qg) (Max) @ Vgs164 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7144 pF @ 400 V
FET Feature-
Power Dissipation (Max)291W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4-3
Package / CaseTO-247-4

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