Heisener Electronics
BOM

IPZ60R099P6FKSA1

600V|37.9A (Tc)|278W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V TO247-4

Specifications

Brand
Infineon Technologies
Package
PG-TO247-4
Packaging
—
Weight
—

Total Inventory

175pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPZ60R099P6FKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3330pF @ 100V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4
Package / CaseTO-247-4

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