Heisener Electronics
BOM

IPWS65R075CFD7AXKSA1

650 V|32A (Tc)|171W (Tc)
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MOSFET N-CH 650V 32A TO247-3-41

Specifications

Brand
Infineon Technologies
Package
PG-TO247-3-41
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPWS65R075CFD7AXKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CFD7A
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3288 pF @ 400 V
FET Feature-
Power Dissipation (Max)171W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3

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