Heisener Electronics
BOM

IPW95R060PFD7XKSA1

950 V|74.7A (Tc)|446W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 950V 74.7A TO247-3

Specifications

Brand
Infineon Technologies
Package
PG-TO247-3-41
Packaging
—
Weight
—

Total Inventory

996pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPW95R060PFD7XKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950 V
Current - Continuous Drain (Id) @ 25°C74.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 57A, 10V
Vgs(th) (Max) @ Id3.5V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs315 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9378 pF @ 400 V
FET Feature-
Power Dissipation (Max)446W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3

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