Heisener Electronics
BOM

IPW90R1K2C3FKSA1

900V|5.1A (Tc)|83W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 900V 5.1A TO-247

Specifications

Brand
Infineon Technologies
Package
PG-TO247-3
Packaging
—
Weight
—

Total Inventory

226pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPW90R1K2C3FKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 100V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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