Contact
Send MessageIPW65R190C6FKSA1
650V|20.2A (Tc)|151W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 650V 20.2A TO247
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TO247-3
- Packaging
- —
- Weight
- —
Total Inventory
353pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IPW65R190C6FKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA | |
| Gate Charge (Qg) (Max) @ Vgs | 73nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 151W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO247-3 | |
| Package / Case | TO-247-3 |
Recommended Products
RES 620K OHM 1W 5% AXIAL
RES 1.5K OHM 10W 5% AXIAL
MEMS OSC XO 8.1920MHZ LVCM LVTTL
CAP TAN POLYMER COTS SMD 330UF 2
CAP CER 180PF 50V C0G/NP0 0805
CAP CER 2200PF 50V X7R 1206
SWITCH KEYLOCK 3POS SPDT 4A 125V
CONN SOCKET STRIP 52 POS 2.54MM
CONN HEADER 45POS .100" SNGL TIN
.025" BOARD SPACERS
