Heisener Electronics
BOM

IPW65R080CFDAFKSA1

650V|43.3A (Tc)|391W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 700V 43.3A TO247

Specifications

Brand
Infineon Technologies
Package
PG-TO247-3
Packaging
—
Weight
—

Total Inventory

1,932pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPW65R080CFDAFKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, CoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs161nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4440pF @ 100V
FET Feature-
Power Dissipation (Max)391W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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