IPW60R199CP

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Discover how IPW60R199CP from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	Infineon Technologies
Series	CoolMOS?
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	199 mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1520pF @ 100V
FET Feature	-
Power Dissipation (Max)	139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3

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