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IPW50R199CPFKSA1

550V|17A (Tc)|139W (Tc)
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MOSFET N-CH 550V 17A TO-247

Specifications

Brand
Infineon Technologies
Package
PG-TO247-3
Packaging
—
Weight
—

Total Inventory

346pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPW50R199CPFKSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 100V
FET Feature-
Power Dissipation (Max)139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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