Heisener Electronics
BOM

IPU06N03LZG

25 V|50A (Tc)|83W (Tc)
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N-CHANNEL POWER MOSFET

Specifications

Brand
Infineon Technologies
Package
PG-TO251-3-21
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IPU06N03LZG from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2783 pF @ 15 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3-21
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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